pnp tip125-126-127 08/10/2012 comset semiconductors 1 | 3 semiconductors silicon darlington power transistors pnp epitaxial-base transistors in a monolithic dalrington circuit and housed in a to-220 enveloppe. they are intended for use in pow er linear and switching applications. npn complements are tip120-121-122 compliance to rohs . absolute maximum ratings symbol ratings value unit v cbo collector-base voltage tip125 -60 v tip126 -80 TIP127 -100 v ceo collector-emitter voltage tip125 -60 v tip126 -80 TIP127 -100 v ebo emitter-base voltage tip125 -5 v tip126 TIP127 i c collector current tip125 -5 a tip126 TIP127 i cm collector peak current tip125 -8 a tip126 TIP127 i b base current tip125 -120 ma tip126 TIP127 p t power dissipation @ t c < 25 tip125 65 w tip126 TIP127 @ t a < 25 tip125 2 tip126 TIP127 t j junction temperature tip125 150 c tip126 TIP127 t s storage temperature range tip125 -65 to +150 tip126 TIP127
pnp tip125-126-127 08/10/2012 comset semiconductors 2 | 3 semiconductors thermal characteristics symbol ratings value unit r thj-case from junction-case 1.92 c/w r thj-amb from junction-ambient 62.5 c/w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current i e = 0 v cb = -v cbo max tip125 - - -0.2 ma tip126 TIP127 i ceo collector cutoff current i e = 0 v ce = 1/2 -v ceo max tip125 - - -0.5 ma tip126 TIP127 i ebo emitter cutoff current v eb = -5 v i c = 0 tip125 - - -2 ma tip126 TIP127 v ceo collector-emitter breakdown voltage (*) i c = -30 ma i b = 0 tip125 -60 - - v tip126 -80 - - TIP127 -100 - - v ce(sat) collector-emitter saturation voltage (*) i c = -3 a i b = -12 ma tip125 - - -2 v tip126 TIP127 i c = -5 a i b = -20 ma tip125 - - -4 tip126 TIP127 v be(on) base-emitter voltage (*) i c = -3 a v ce = -3 v tip125 - - -2.5 v tip126 TIP127 h fe dc current gain (*) v ce = -3.0 v i c = -0.5 a tip125 1000 - - - tip126 TIP127 v ce = -3.0 v i c = -3 a tip125 1000 - - tip126 TIP127 c ob output capacitance i e = 0, v cb = -10 v f test = 1mhz tip125 - - 200 pf tip126 TIP127 (*) pulse width 300 s, duty cycle 2.0%
pnp tip125-126-127 08/10/2012 comset semiconductors 3 | 3 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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